| 1. | Standard guide for measuring characteristics of sapphire substrates
蓝宝石衬底的特征测量标准指南 |
| 2. | Thin sin layers and nitride - based multiquantum well ( mqw ) light emitting diode ( led ) structures with conventional single gan buffer and gan / sin double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition ( mocvd )
摘要以有机金属化学气象沉积在蓝宝石基板上成长由单一氮化镓成核层与氮化镓/氮化矽双缓冲层所形成的两种不同氮基础的多层量子井发光二极体结构。 |
| 3. | C - plane sapphire substrate for opto - electronic applications as nitride based led is one of the latest additions to our sapphire product line . over the years , sapphire has proven to be a reliable base substrate to grow gallium nitride epitaxial film for high brightness led
C -轴切型的蓝宝石是近年来应用在生长氮化镓蓝光led重要的基材。兆晶科技新近增加此产品以因应光电业者殷切的需求。 |
| 4. | The main contents and results are listed as follows : with the help of opfcad software , anti - reflective and protective films of sio2 and sio2 / si are designed on the sapphire substrate and analysis of structure sensitive factor and variation are done
主要研究成果如下：利用opfcad软件在蓝宝石衬底上设计了sio _ 2 、 sio _ 2 si等增透保护膜系，并对所设计的膜系进行了结构敏感因子( n ， d )及结构偏差分析。 |
| 5. | These devices include light - emitting diode , laser diode , uv - detector , mesfet , hemt , modfet etc . since 1990 ' s , on the basis of advanced techniques of materials preparation , gan - based leds and lds were achieved successfully , and leds on sapphire substrates have already been commercialized
九十年代以来，在先进制备技术的基础上， gan基leds和lds分别研制成功，其中蓝宝石衬底上的leds已经进入了商品化。 gan基微电子器件也得到了广泛的关注，取得了一定的研究进展。 |
| 6. | The morphologies of one - dimensional gan nano structures were affected greatly by substrates . we can get different one - dimensional gan nano structures by choosing different substrates . among the products , smooth and straight gan nanowires on quartz substrates , long and transparent gan nanobelts on sapphire substrates , short gan nanorods on si substrates and gan nanopoles on gaas substrates were found , respectively
我们可以通过选择不同的衬底来分别合成形态不同的一维gan纳米结构，其中在石英衬底上合成的是平直的gan纳米线，在蓝宝石衬底上合成的是细长透明的gan纳米带，在gaas衬底上合成的是柱状的一维gan纳米结构，而在以衬底上合成的是粗短的gan纳米棒。 |
| 7. | In this thesis , we grow hexagonal gan on c - plane sapphire substrates in a horizontal mocvd reactor equipped with an in situ normal incidence reflectance monitoring , and the focus has been turned to improve the quality of unintentionally doped gan epilayer . listed below are the main contents of this thesis . ( 1 ) a single - wavelength normal incidence reflectance monitoring system was installed
本文利用配有近垂直入射激光反射在位监测的卧式mocvd在c面蓝宝石衬底上生长六方相的gan薄膜，围绕提高本征gan外延层质量的目的，开展了具体如下的工作： ( 1 )在mocvd设备上搭建了一套单波长近垂直入射激光反射在位监测系统。 |
| 8. | Superconducting mgb2 thin films were fabricated on single - crystal sapphire substrate by hfcvd and hpcvd , respectively . the experiments were carried out both in situ and ex situ . in situ method refers to acquiring mgb2 thin films directly during the deposition process . ex situ method is defined as obtaining mgb2 thin films indirectly by post - annealing of precursor b film in high mg vapor pressure at high temperatures
实验分原位法和非原位法两种工艺，原位法是在薄膜沉积过程中直接生成了mgb2超导薄膜；非原位法是先在基片上沉积前驱物b膜，然后将b膜在mg蒸气中高温退火得到mgb2超导薄膜。 |
| 9. | The experiment results showed we had got well nanowires on si and sapphire substrate and the au and ag act catalyst respectively , we got zno nanowires array on si and sapphire substrate using the ag as catalyst . 2 . we measured the pl spectrum of zno nanowires samples excited by an ultraviolet fluorescence spectrophotometer in different wavelength
实验结果显示分别采用金和银为催化剂在硅衬底和蓝宝石衬底上制备出结晶质量较好的纳米线,其中在银催化的硅基片和蓝宝石基片上制备出排列整齐的纳米线阵列。 |
